H5ANAG6NCR-VKC vs H5ANAG6NAMR-UHC Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci H5ANAG6NCR-VKC disebabkan oleh SK hynix dan H5ANAG6NAMR-UHC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr H5ANAG6NCR-VKC H5ANAG6NAMR-UHC
Merek SK hynix SK hynix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan DDR4 SDRAM DDR4 SDRAM
Memory Density 16 Gbit 16 Gbit (2 GB)
Organisasi 2G x 8 1G x 16
Antaramuka DDR4 (Double Data Rate 4) —
Supply Voltage VDD 1.2 V —
Supply Voltage VDDQ 1.2 V —
Kadar Data [DATA_NEEDED: verified speed grade in Mbps] —
Kemasan 96-ball FBGA FBGA-96 (PBGA96)
Jenis Pemasangan Surface Mount Surface Mount (BGA solder ball)
Banks 16 banks (4 bank groups x 4) —
Burst Length BL8 —
Refresh Mode 1x / 2x / 4X per JEDEC DDR4 —
Suhu Operasi [DATA_NEEDED: temperature suffix range confirmation] [DATA_NEEDED: operating temperature range]
Technology CMOS —
Application Main memory (PC / server / embedded) —
Status RoHS [DATA_NEEDED: RoHS compliance statement] [DATA_NEEDED: RoHS status]
Speed Grade / Data Rate — DDR4-2400 (UHC bin, PC4-19200)
Supply Voltage (VDD) — 1.2 V
Architecture — CMOS DDR4 with bank groups
Power Class — Normal Power
Refresh — Self-refresh and auto-refresh (DDR4 standard 64 ms)
Latensi CAS — [DATA_NEEDED: CL for UHC bin]
Jenis Antaramuka — Parallel, synchronous, double data rate
Available Speed Bins (family) — PB / RD / TF / UH / VK
Application Class — Main memory, embedded, industrial
Status Lingkungan Hidup — Active production

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