H5TQ4G63EFR-RDC vs H5TQ4G63AFR-H9C Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5TQ4G63EFR-RDC disebabkan oleh SK hynix dan H5TQ4G63AFR-H9C disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5TQ4G63EFR-RDC | H5TQ4G63AFR-H9C |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $6.50 |
| Jenis Ingatan | DDR3 SDRAM | DDR3 SDRAM |
| Saiz Ingatan | 4 Gbit | — |
| Organisasi | 512M x 8 | 256M x 16 |
| Supply Voltage (VDD) | 1.425 V to 1.575 V (1.5 V typ.) | — |
| Clock Rate | 1.066 GHz class | — |
| Kemasan | FBGA-96 | 96-ball TFBGA |
| Suhu Operasi | 0C to +95C (RDC grade) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Antaramuka | DDR3 (parallel, JEDEC DDR3 command interface) | — |
| Data Mask | Yes (DM function) | — |
| On-Chip Termination | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| Asynchronous Reset | Yes | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Status RoHS | Compliant | — |
| Manufacturer | SK hynix (Hynix Semiconductor) | — |
| Density | — | 4 Gb |
| Tegangan Pemberi Arus | — | 1.5 V |
| Clock Speed (tCK) | — | 0.255 ns |
| Package Shape | — | RECTANGULAR |
| Refresh Cycles | — | 8192 |
| Number of Terminals | — | 96 |
| Temperature Grade | — | OTHER |
| RoHS | — | Compliant |
| Boson Bebas | — | Yes |
| Kadar Data | — | 3.9 Gbps per pin (approx) |
| Ball Pitch | — | 0.8 mm |