H5TQ4G63EFR-RDC vs H5TQ4G63AFR-H9C 比較
詳細並排比較 H5TQ4G63EFR-RDC 由 SK hynix 與 H5TQ4G63AFR-H9C 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5TQ4G63EFR-RDC | H5TQ4G63AFR-H9C |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | — | $6.50 |
| 記憶體類型 | DDR3 SDRAM | DDR3 SDRAM |
| 記憶體容量 | 4 Gbit | — |
| 組織 | 512M x 8 | 256M x 16 |
| Supply Voltage (VDD) | 1.425 V to 1.575 V (1.5 V typ.) | — |
| Clock Rate | 1.066 GHz class | — |
| 封裝 | FBGA-96 | 96-ball TFBGA |
| 工作溫度 | 0C to +95C (RDC grade) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 介面 | DDR3 (parallel, JEDEC DDR3 command interface) | — |
| Data Mask | Yes (DM function) | — |
| On-Chip Termination | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| Asynchronous Reset | Yes | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| RoHS 狀態 | Compliant | — |
| Manufacturer | SK hynix (Hynix Semiconductor) | — |
| Density | — | 4 Gb |
| 供應電壓 | — | 1.5 V |
| Clock Speed (tCK) | — | 0.255 ns |
| Package Shape | — | RECTANGULAR |
| Refresh Cycles | — | 8192 |
| Number of Terminals | — | 96 |
| Temperature Grade | — | OTHER |
| RoHS | — | Compliant |
| 無鹵素 | — | Yes |
| 資料速率 | — | 3.9 Gbps per pin (approx) |
| Ball Pitch | — | 0.8 mm |