H5TQ4G63EFR-RDC vs H5TQ4G63AFR-H9C Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5TQ4G63EFR-RDC sa pamamagitan ng SK hynix at H5TQ4G63AFR-H9C sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5TQ4G63EFR-RDC | H5TQ4G63AFR-H9C |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | — | $6.50 |
| Uri ng Memory | DDR3 SDRAM | DDR3 SDRAM |
| Laki ng Memory | 4 Gbit | — |
| Organisasyon | 512M x 8 | 256M x 16 |
| Supply Voltage (VDD) | 1.425 V to 1.575 V (1.5 V typ.) | — |
| Clock Rate | 1.066 GHz class | — |
| Packhaging | FBGA-96 | 96-ball TFBGA |
| Temperature na Operasyon | 0C to +95C (RDC grade) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Interface | DDR3 (parallel, JEDEC DDR3 command interface) | — |
| Data Mask | Yes (DM function) | — |
| On-Chip Termination | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| Asynchronous Reset | Yes | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Tindminan RoHS | Compliant | — |
| Manufacturer | SK hynix (Hynix Semiconductor) | — |
| Density | — | 4 Gb |
| Volte ng Pagbibigay | — | 1.5 V |
| Clock Speed (tCK) | — | 0.255 ns |
| Package Shape | — | RECTANGULAR |
| Refresh Cycles | — | 8192 |
| Number of Terminals | — | 96 |
| Temperature Grade | — | OTHER |
| RoHS | — | Compliant |
| Wala sa Halogen | — | Yes |
| Rate ng Data | — | 3.9 Gbps per pin (approx) |
| Ball Pitch | — | 0.8 mm |