IAUCN10S5L280DATMA1 vs IAUTN12S5N017ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN10S5L280DATMA1 disebabkan oleh Infineon dan IAUTN12S5N017ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN10S5L280DATMA1 IAUTN12S5N017ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 —
Configuration Dual N-Channel MOSFET Array —
Drain-Source Voltage (Vds) 100 V —
Continuous Drain Current (Id) at Tj 23 A —
Power Dissipation (Pd) at Tc 38 W —
Kemasan PG-TDSON-8-61 (SSO8) PG-HSOF-8-1 (HSOF-8, surface mount)
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualified Yes (AEC-Q101, IAU prefix) —
Technology OptiMOS 5 Trench MOSFET OptiMOS 5 trench MOSFET
Gambaran Suhu Operasi -55C to +175C (junction) -55 °C to +175 °C (junction)
Kiraan Pin 8 —
Aras MSL 1 1 (per JEDEC J-STD-020, by package)
Status RoHS Compliant Compliant (per distributor listings)
Packing Tape & Reel (T&R) —
Series — OptiMOS™ 5
FET Type — N-Channel
Drain-Source Voltage (V<sub>DS</sub>) — 120 V
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) — 314 A
On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) — 1.7 mΩ
Gate Threshold Voltage (V<sub>GS(th)</sub>) — 2.5 V typical (range per datasheet)
Gate Charge (Q<sub>g</sub>) — per datasheet curve (typ. ~150 nC class)
Maximum Junction Temperature — 175 °C
Mounting Position — Kelvin source pin (pin 2) for high-frequency layouts
Qualification — Automotive grade (per Infineon part page, AEC-Q101 expected for the family)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga