IPB020N10N5LFATMA1 vs IPB020N10N5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB020N10N5LFATMA1 disebabkan oleh Infineon dan IPB020N10N5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPB020N10N5LFATMA1 - 100V 176A 2mΩ OptiMOS 5 Linear FET | Infineon
IPB020N10N5LFATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IPB020N10N5LFATMA1 | IPB020N10N5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 Linear FET | — |
| Technology | N-Channel Enhancement-Mode Power MOSFET | OptiMOS 5 |
| Drain-Source Voltage (VDS) max | 100 V | — |
| Continuous Drain Current (Tc) | 176 A | — |
| Silicon-Limited Drain Current | 289 A | — |
| Package-Limited Drain Current | 120 A | — |
| Pulsed Drain Current (VDS=56V, tp=10ms) | 10.2 A | — |
| On-State Resistance RDS(on) max | 2.0 mΩ | — |
| Total Power Dissipation (Tc) | 313 W | — |
| Kemasan | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK-3) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55 °C to +175 °C | -55C to +175C |
| Gate Threshold Voltage VGS(th) typ | 2.5 V | — |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 | — |
| Marking Code | 020N10LF | — |
| Part Number | — | IPB020N10N5ATMA1 |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tc | — | 120 A |
| Maximum Drain Current (ID max, per Infineon product page) | — | 176 A |
| On-Resistance RDS(on) max | — | 2 mΩ |
| Power Dissipation (PD) at Tc | — | 375 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th)] |
| Channel Type | — | N-Channel |
| Packaging | — | Tape & Reel (ATMA1 suffix) |