IPB020N10N5LFATMA1 vs IPB020N10N5ATMA1 比較
詳細並排比較 IPB020N10N5LFATMA1 由 Infineon 與 IPB020N10N5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPB020N10N5LFATMA1 - 100V 176A 2mΩ OptiMOS 5 Linear FET | Infineon
IPB020N10N5LFATMA1 ✓ 啟用中規格比較
| 參數 | IPB020N10N5LFATMA1 | IPB020N10N5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 Linear FET | — |
| Technology | N-Channel Enhancement-Mode Power MOSFET | OptiMOS 5 |
| Drain-Source Voltage (VDS) max | 100 V | — |
| Continuous Drain Current (Tc) | 176 A | — |
| Silicon-Limited Drain Current | 289 A | — |
| Package-Limited Drain Current | 120 A | — |
| Pulsed Drain Current (VDS=56V, tp=10ms) | 10.2 A | — |
| On-State Resistance RDS(on) max | 2.0 mΩ | — |
| Total Power Dissipation (Tc) | 313 W | — |
| 封裝 | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK-3) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55 °C to +175 °C | -55C to +175C |
| Gate Threshold Voltage VGS(th) typ | 2.5 V | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 | — |
| Marking Code | 020N10LF | — |
| Part Number | — | IPB020N10N5ATMA1 |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tc | — | 120 A |
| Maximum Drain Current (ID max, per Infineon product page) | — | 176 A |
| On-Resistance RDS(on) max | — | 2 mΩ |
| Power Dissipation (PD) at Tc | — | 375 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th)] |
| Channel Type | — | N-Channel |
| Packaging | — | Tape & Reel (ATMA1 suffix) |