IPB020N10N5LFATMA1 vs IPB020N10N5ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPB020N10N5LFATMA1 sa pamamagitan ng Infineon at IPB020N10N5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPB020N10N5ATMA1 IPB020N10N5ATMA1 - 100V 2mΩ N-Channel OptiMOS 5 | Infineon

IPB020N10N5ATMA1 - 100V 2mΩ N-Channel OptiMOS 5 | Infineon

IPB020N10N5ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPB020N10N5LFATMA1 IPB020N10N5ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 Linear FET —
Technology N-Channel Enhancement-Mode Power MOSFET OptiMOS 5
Drain-Source Voltage (VDS) max 100 V —
Continuous Drain Current (Tc) 176 A —
Silicon-Limited Drain Current 289 A —
Package-Limited Drain Current 120 A —
Pulsed Drain Current (VDS=56V, tp=10ms) 10.2 A —
On-State Resistance RDS(on) max 2.0 mΩ —
Total Power Dissipation (Tc) 313 W —
Packhaging PG-TO263-3 (D2PAK) PG-TO263-3 (D2PAK-3)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55 °C to +175 °C -55C to +175C
Gate Threshold Voltage VGS(th) typ 2.5 V —
Tindminan RoHS Compliant Compliant
Level ng MSL 1 —
Marking Code 020N10LF —
Part Number — IPB020N10N5ATMA1
Uri ng Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tc — 120 A
Maximum Drain Current (ID max, per Infineon product page) — 176 A
On-Resistance RDS(on) max — 2 mΩ
Power Dissipation (PD) at Tc — 375 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th)]
Channel Type — N-Channel
Packaging — Tape & Reel (ATMA1 suffix)

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