IPB100N12S305ATMA1 vs IPB60R280P7ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB100N12S305ATMA1 disebabkan oleh Infineon dan IPB60R280P7ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPB100N12S305ATMA1 | IPB60R280P7ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $0.88 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS Power MOSFET | CoolMOS P7 (600 V) |
| Channel Type | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 120 V | — |
| Continuous Drain Current (ID) | 100 A (Tc) | — |
| Power Dissipation (PD) | 300 W (Tc) | — |
| On-Resistance (RDS(on)) | 4.8 mOhm (typical) | — |
| Total Gate Charge (Qg) | 185 nC | — |
| Gambaran Suhu Operasi | -55 C to +175 C (TJ) | -55 °C to +150 °C (T_j max) |
| Kemasan / Case | PG-TO263-3-1 (D2PAK, surface mount) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Bilangan Pin | 3 (Gate, Drain, Source) | — |
| Automotive Qualification | AEC-Q101 Qualified | — |
| Tingkat sensitiviti Air Nama (MSL) | MSL1 (up to 260 C peak reflow) | — |
| Avalanche Tested | 100% Avalanche Tested | — |
| RoHS Compliance | RoHS Compliant (Green Product) | — |
| Jenis Transistor | — | N-Channel MOSFET |
| Technology | — | Superjunction (SJ) |
| Drain-Source Voltage (V_DSS) | — | 600 V |
| Continuous Drain Current (I_D, T_C=25°C) | — | 12 A |
| On-Resistance R_DS(on) max (V_GS=10V) | — | 280 mOhm |
| Gate-Source Threshold V_GS(th) typ | — | 3.5 V |
| Power Dissipation P_D (T_C=25°C) | — | 53 W |
| Kemasan | — | PG-TO263-3 (D2PAK) |
| Kiraan Pin | — | 3 (2 + Tab) |
| Configuration | — | Single N-Channel |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Generation | — | 7th Gen CoolMOS (successor to P6) |