IPD046N08N5ATMA1 vs IPB031N08N5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD046N08N5ATMA1 disebabkan oleh Infineon dan IPB031N08N5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD046N08N5ATMA1 | IPB031N08N5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Series | OptiMOS™ 5 80V | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) Max | 80 V | 80 V |
| Continuous Drain Current (ID) at Tc=25°C | 90 A | — |
| On-Resistance RDS(on) Max at VGS=10V | 4.6 mΩ | — |
| Gate-Source Voltage (VGS) Max | ±20 V | [DATA_NEEDED: VGS max rating] |
| Power Dissipation (PD) at Tc=25°C | 125 W | — |
| Gambaran Suhu Hubungan Operasi | -55 °C to +175 °C | — |
| Kemasan / Case | PG-TO252-3 (DPAK), 3-pin (2 leads + tab) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | OptiMOS™ 5 trench MOSFET | OptiMOS 5 (N-channel trench MOSFET) |
| Status RoHS | ROHS3 Compliant | Compliant |
| Aras MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Configuration | Single N-channel, 3-pin (Gate / Drain tab / Source) | — |
| Continuous Drain Current (ID) | — | 120 A (Tc) |
| Power Dissipation (PD) Max | — | 167 W (Tc) |
| On-Resistance (RDS(on)) Max | — | 3.1 mOhm (VGS=10V) |
| Gate Threshold Voltage (VGS(th)) Typ | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Gambaran Suhu Operasi | — | -55 C to +175 C |
| Kemasan | — | PG-TO263-3 (D2PAK) |
| Kiraan Pin | — | 3 (Gate, Drain, Source + Tab) |
| Tab Connection | — | Drain (electrically connected to pin) |
| Automotive Qualified | — | Yes (per Arrow listing) |