IPD046N08N5ATMA1 vs IPB031N08N5ATMA1 Comparison
Detailed side-by-side comparison of IPD046N08N5ATMA1 by Infineon and IPB031N08N5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB031N08N5ATMA1 - 80V 120A OptiMOS 5 N-Channel MOSFET | Infineon
IPB031N08N5ATMA1 ✓ ActiveSpecification Comparison
| Parameter | IPD046N08N5ATMA1 | IPB031N08N5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | — |
| Product Series | OptiMOS™ 5 80V | — |
| Transistor Type | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) Max | 80 V | 80 V |
| Continuous Drain Current (ID) at Tc=25°C | 90 A | — |
| On-Resistance RDS(on) Max at VGS=10V | 4.6 mΩ | — |
| Gate-Source Voltage (VGS) Max | ±20 V | [DATA_NEEDED: VGS max rating] |
| Power Dissipation (PD) at Tc=25°C | 125 W | — |
| Operating Junction Temperature Range | -55 °C to +175 °C | — |
| Package / Case | PG-TO252-3 (DPAK), 3-pin (2 leads + tab) | — |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS™ 5 trench MOSFET | OptiMOS 5 (N-channel trench MOSFET) |
| RoHS Status | ROHS3 Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Configuration | Single N-channel, 3-pin (Gate / Drain tab / Source) | — |
| Continuous Drain Current (ID) | — | 120 A (Tc) |
| Power Dissipation (PD) Max | — | 167 W (Tc) |
| On-Resistance (RDS(on)) Max | — | 3.1 mOhm (VGS=10V) |
| Gate Threshold Voltage (VGS(th)) Typ | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Operating Temperature Range | — | -55 C to +175 C |
| Package | — | PG-TO263-3 (D2PAK) |
| Pin Count | — | 3 (Gate, Drain, Source + Tab) |
| Tab Connection | — | Drain (electrically connected to pin) |
| Automotive Qualified | — | Yes (per Arrow listing) |