IPD068N10N3GATMA1 vs IPD90N06S404ATMA2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD068N10N3GATMA1 disebabkan oleh Infineon dan IPD90N06S404ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPD068N10N3GATMA1 - 100V 90A OptiMOS 3 N-Channel MOSFET | Infineon
IPD068N10N3GATMA1 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | IPD068N10N3GATMA1 | IPD90N06S404ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPD068N10N3GATMA1 | — |
| Technology | OptiMOS 3 (N-Channel, Enhancement Mode) | OptiMOS |
| Drain-Source Voltage (VDS) | 100 V | 60 V |
| Continuous Drain Current (ID) at Tc | 90 A | — |
| On-Resistance RDS(on) max | 6.8 mOhm | — |
| Power Dissipation (PD) at Tc | 150 W | — |
| Gate Threshold Voltage VGS(th) | 2.0 V to 4.0 V (typical) | — |
| Kemasan | PG-TO252-3 (DPAK, 2 leads + tab) | PG-TO252-3-11 (DPAK), 3-pin surface mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Hubungan Operasi | -55 C to +175 C | — |
| Channel Type | N-Channel | — |
| Configuration | Single | — |
| Status RoHS | Compliant | Compliant (Green Product) |
| Aras MSL | 1 | MSL1 |
| Packing | Tape & Reel (T/R) | — |
| Qualification | Industrial (non-automotive) | — |
| FET Type | — | N-Channel, Enhancement Mode |
| Continuous Drain Current (ID, Tc) | — | 90 A |
| Power Dissipation (PD, Tc) | — | 150 W |
| On-Resistance (RDS(on)) | — | 3.8 mΩ (typ) at VGS = 10 V |
| Operating Temperature (TJ max) | — | 175 °C |
| Peak Reflow Temperature | — | 260 °C (MSL1) |
| Avalanche Rating | — | 100% Avalanche Tested |
| Automotive Qualification | — | AEC-Q101 |
| Polarity | — | Single N-Channel |