IPD068N10N3GATMA1 vs IPD90N06S404ATMA2 比較

詳細並排比較 IPD068N10N3GATMA1 由 Infineon 與 IPD90N06S404ATMA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPD90N06S404ATMA2 IPD90N06S404ATMA2 - 60V 90A N-Ch OptiMOS MOSFET | Infineon

IPD90N06S404ATMA2 - 60V 90A N-Ch OptiMOS MOSFET | Infineon

IPD90N06S404ATMA2 ✓ 啟用中

規格比較

參數 IPD068N10N3GATMA1 IPD90N06S404ATMA2
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Part Number IPD068N10N3GATMA1 —
Technology OptiMOS 3 (N-Channel, Enhancement Mode) OptiMOS
Drain-Source Voltage (VDS) 100 V 60 V
Continuous Drain Current (ID) at Tc 90 A —
On-Resistance RDS(on) max 6.8 mOhm —
Power Dissipation (PD) at Tc 150 W —
Gate Threshold Voltage VGS(th) 2.0 V to 4.0 V (typical) —
封裝 PG-TO252-3 (DPAK, 2 leads + tab) PG-TO252-3-11 (DPAK), 3-pin surface mount
安裝類型 Surface Mount Surface Mount
工作接面溫度 -55 C to +175 C —
Channel Type N-Channel —
Configuration Single —
RoHS 狀態 Compliant Compliant (Green Product)
MSL 等級 1 MSL1
Packing Tape & Reel (T/R) —
Qualification Industrial (non-automotive) —
FET Type — N-Channel, Enhancement Mode
Continuous Drain Current (ID, Tc) — 90 A
Power Dissipation (PD, Tc) — 150 W
On-Resistance (RDS(on)) — 3.8 mΩ (typ) at VGS = 10 V
Operating Temperature (TJ max) — 175 °C
Peak Reflow Temperature — 260 °C (MSL1)
Avalanche Rating — 100% Avalanche Tested
Automotive Qualification — AEC-Q101
Polarity — Single N-Channel

資料表與資源

瀏覽所有產品 建立 BOM 索取報價