IPD600N25N3GATMA1 vs IPD60R1K0PFD7SAUMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD600N25N3GATMA1 disebabkan oleh Infineon dan IPD60R1K0PFD7SAUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD600N25N3GATMA1 | IPD60R1K0PFD7SAUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Series | OptiMOS 3 | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 250 V | 600 V |
| Continuous Drain Current (ID) at Tc | 25 A | — |
| Power Dissipation (PD) at Tc | 136 W | — |
| On-Resistance RDS(on) max | 60 mOhm at VGS = 10 V | — |
| Tegangan Had Kepasaran | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Suhu Hubungan Operasi | -55 C to +175 C | — |
| Kemasan | PG-TO252-3 (DPAK), 3-pin (2+Tab), surface mount | PG-TO252-3 (DPAK, 2 leads + tab, SC-63) |
| Jenis Pemasangan | Surface Mount (Tape & Reel) | Surface Mount |
| Technology | OptiMOS 3 trench MOSFET | CoolMOS PFD7 Superjunction (SJ) MOSFET |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Compliant | — |
| Boson Bebas | Yes, per IEC 61249-2-21 | — |
| JEDEC Qualification | Qualified for target application | — |
| Polarity / Channel Type | — | N-Channel Enhancement Mode |
| Continuous Drain Current (ID) at TC | — | 4.7 A |
| Power Dissipation (PD) at TC | — | 26 W |
| Drain-Source On-Resistance (RDS(on)) | — | 1 Ω @ VGS=10V |
| Gate Threshold Voltage (VGS(th)) | — | ±20 V (max gate-source) |
| Gate Charge (QG) | — | 6 nC @ VGS=10V |
| Output Capacitance (Coss) | — | 230 pF @ 400 V |
| Gambaran Suhu Operasi | — | -55C to +150C (TJ) |
| Gate Drive Voltage (recommended) | — | 10 V (full enhancement) |
| Status RoHS | — | Compliant |
| Series | — | CoolMOS PFD7 consumer / superjunction |