IPD600N25N3GATMA1 vs IPD60R1K0PFD7SAUMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD600N25N3GATMA1 sa pamamagitan ng Infineon at IPD60R1K0PFD7SAUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD600N25N3GATMA1 IPD600N25N3GATMA1 - 250V 25A OptiMOS 3 N-MOSFET DPAK | Infineon

IPD600N25N3GATMA1 - 250V 25A OptiMOS 3 N-MOSFET DPAK | Infineon

IPD600N25N3GATMA1 ✓ Nakahanda
Infineon
IPD60R1K0PFD7SAUMA1 IPD60R1K0PFD7SAUMA1 - 600V 1Ω CoolMOS PFD7 | Infineon | DPAK

IPD60R1K0PFD7SAUMA1 - 600V 1Ω CoolMOS PFD7 | Infineon | DPAK

IPD60R1K0PFD7SAUMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD600N25N3GATMA1 IPD60R1K0PFD7SAUMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Part Series OptiMOS 3 —
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 250 V 600 V
Continuous Drain Current (ID) at Tc 25 A —
Power Dissipation (PD) at Tc 136 W —
On-Resistance RDS(on) max 60 mOhm at VGS = 10 V —
Threshold na Voltage ng Gate [DATA_NEEDED: VGS(th) typical/min/max] —
Temperature ng Junction na Operasyon -55 C to +175 C —
Packhaging PG-TO252-3 (DPAK), 3-pin (2+Tab), surface mount PG-TO252-3 (DPAK, 2 leads + tab, SC-63)
Uri ng Pagpapasok Surface Mount (Tape & Reel) Surface Mount
Technology OptiMOS 3 trench MOSFET CoolMOS PFD7 Superjunction (SJ) MOSFET
Lead Plating Pb-free —
RoHS Compliance Compliant —
Wala sa Halogen Yes, per IEC 61249-2-21 —
JEDEC Qualification Qualified for target application —
Polarity / Channel Type — N-Channel Enhancement Mode
Continuous Drain Current (ID) at TC — 4.7 A
Power Dissipation (PD) at TC — 26 W
Drain-Source On-Resistance (RDS(on)) — 1 Ω @ VGS=10V
Gate Threshold Voltage (VGS(th)) — ±20 V (max gate-source)
Gate Charge (QG) — 6 nC @ VGS=10V
Output Capacitance (Coss) — 230 pF @ 400 V
Hanay ng Temperature na Operasyon — -55C to +150C (TJ)
Gate Drive Voltage (recommended) — 10 V (full enhancement)
Tindminan RoHS — Compliant
Series — CoolMOS PFD7 consumer / superjunction

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