IPD600N25N3GATMA1 vs IPD60R600C6ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD600N25N3GATMA1 disebabkan oleh Infineon dan IPD60R600C6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD600N25N3GATMA1 IPD60R600C6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Series OptiMOS 3 —
Jenis Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 250 V 600 V
Continuous Drain Current (ID) at Tc 25 A —
Power Dissipation (PD) at Tc 136 W —
On-Resistance RDS(on) max 60 mOhm at VGS = 10 V —
Tegangan Had Kepasaran [DATA_NEEDED: VGS(th) typical/min/max] —
Suhu Hubungan Operasi -55 C to +175 C —
Kemasan PG-TO252-3 (DPAK), 3-pin (2+Tab), surface mount PG-TO252-3 (DPAK)
Jenis Pemasangan Surface Mount (Tape & Reel) Surface Mount
Technology OptiMOS 3 trench MOSFET CoolMOS C6 (Superjunction)
Lead Plating Pb-free —
RoHS Compliance Compliant —
Boson Bebas Yes, per IEC 61249-2-21 —
JEDEC Qualification Qualified for target application —
Series — CoolMOS C6
Part Suffix — ATMA1 (Tape & Reel)
Gate-Source Voltage (VGS) Max — ±20 V
Continuous Drain Current (ID) at TC=25°C — 7.3 A
Continuous Drain Current (ID) at TC=100°C — [DATA_NEEDED: ID at TC=100°C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-Resistance RDS(on) Max at VGS=10V — 600 mΩ
Total Power Dissipation (Ptot) at TC=25°C — 63 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Gambaran Suhu Operasi — -55 °C to +150 °C
Bilangan Pin — 3 (Gate, Drain, Source)
Status RoHS — Compliant
Aras MSL — 1

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