IPD600N25N3GATMA1 vs IPD60R600C6ATMA1 比較
詳細並排比較 IPD600N25N3GATMA1 由 Infineon 與 IPD60R600C6ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD600N25N3GATMA1 | IPD60R600C6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Series | OptiMOS 3 | — |
| 電晶體類型 | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 250 V | 600 V |
| Continuous Drain Current (ID) at Tc | 25 A | — |
| Power Dissipation (PD) at Tc | 136 W | — |
| On-Resistance RDS(on) max | 60 mOhm at VGS = 10 V | — |
| 閘極臨界電壓 | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| 工作接面溫度 | -55 C to +175 C | — |
| 封裝 | PG-TO252-3 (DPAK), 3-pin (2+Tab), surface mount | PG-TO252-3 (DPAK) |
| 安裝類型 | Surface Mount (Tape & Reel) | Surface Mount |
| Technology | OptiMOS 3 trench MOSFET | CoolMOS C6 (Superjunction) |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Compliant | — |
| 無鹵素 | Yes, per IEC 61249-2-21 | — |
| JEDEC Qualification | Qualified for target application | — |
| Series | — | CoolMOS C6 |
| Part Suffix | — | ATMA1 (Tape & Reel) |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Continuous Drain Current (ID) at TC=25°C | — | 7.3 A |
| Continuous Drain Current (ID) at TC=100°C | — | [DATA_NEEDED: ID at TC=100°C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) Max at VGS=10V | — | 600 mΩ |
| Total Power Dissipation (Ptot) at TC=25°C | — | 63 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| 工作溫度範圍 | — | -55 °C to +150 °C |
| 腳位數 | — | 3 (Gate, Drain, Source) |
| RoHS 狀態 | — | Compliant |
| MSL 等級 | — | 1 |