IPD70N10S312ATMA2 vs IPD35N10S3L26ATMA2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD70N10S312ATMA2 disebabkan oleh Infineon dan IPD35N10S3L26ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPD70N10S312ATMA2 - 100V 70A N-Ch OptiMOS Power MOSFET | Infineon
IPD70N10S312ATMA2 ✓ AktifPengandingan Spesifikasi
| Parametr | IPD70N10S312ATMA2 | IPD35N10S3L26ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD70N10S312ATMA2 | — |
| Technology | OptiMOS-T Power-MOSFET (N-Channel) | Trench MOSFET (OptiMOS-T) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc) | 70 A | 35 A |
| Power Dissipation (Ptot, Tc=25C) | 125 W | — |
| On-State Resistance RDS(on) | [DATA_NEEDED: typical RDS(on) at VGS=10V] | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Gambaran Suhu Operasi | -55C to +175C | [DATA_NEEDED: Tj min/max] |
| Kemasan | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 3 (Gate, Drain, Source) | 3 (Drain, Source, Gate + tab) |
| Channel Type | N-Channel Enhancement Mode | — |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 (unlimited floor life) | [DATA_NEEDED: MSL rating] |
| Avalanche Rated | Yes | — |
| Product Family | — | OptiMOS-T |
| Jenis Transistor | — | N-Channel MOSFET |
| On-Resistance R<sub>DS(on)</sub> max | — | 24 mOhm |
| Power Dissipation (Ptot, Tc) | — | 71 W |
| Gate Threshold V<sub>GS(th)</sub> | — | [DATA_NEEDED: gate threshold typical/range] |
| Automotive Qualification | — | AEC-Q101 |
| Lead-Free | — | Yes |