IPD70N10S312ATMA2 vs IPD35N10S3L26ATMA2 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD70N10S312ATMA2 sa pamamagitan ng Infineon at IPD35N10S3L26ATMA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD35N10S3L26ATMA2 IPD35N10S3L26ATMA2 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon

IPD35N10S3L26ATMA2 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon

IPD35N10S3L26ATMA2 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD70N10S312ATMA2 IPD35N10S3L26ATMA2
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPD70N10S312ATMA2 —
Technology OptiMOS-T Power-MOSFET (N-Channel) Trench MOSFET (OptiMOS-T)
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tc) 70 A 35 A
Power Dissipation (Ptot, Tc=25C) 125 W —
On-State Resistance RDS(on) [DATA_NEEDED: typical RDS(on) at VGS=10V] —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Hanay ng Temperature na Operasyon -55C to +175C [DATA_NEEDED: Tj min/max]
Packhaging PG-TO252-3-11 (DPAK) PG-TO252-3-11 (DPAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pin 3 (Gate, Drain, Source) 3 (Drain, Source, Gate + tab)
Channel Type N-Channel Enhancement Mode —
Tindminan RoHS Compliant Compliant
Level ng MSL 1 (unlimited floor life) [DATA_NEEDED: MSL rating]
Avalanche Rated Yes —
Product Family — OptiMOS-T
Uri ng Transistor — N-Channel MOSFET
On-Resistance R<sub>DS(on)</sub> max — 24 mOhm
Power Dissipation (Ptot, Tc) — 71 W
Gate Threshold V<sub>GS(th)</sub> — [DATA_NEEDED: gate threshold typical/range]
Automotive Qualification — AEC-Q101
Lead-Free — Yes

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