IPD80R600P7ATMA1 vs IPD068N10N3GATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD80R600P7ATMA1 disebabkan oleh Infineon dan IPD068N10N3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPD068N10N3GATMA1 - 100V 90A OptiMOS 3 N-Channel MOSFET | Infineon
IPD068N10N3GATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IPD80R600P7ATMA1 | IPD068N10N3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Drain-Source Voltage (VDS) | 800 V | 100 V |
| Continuous Drain Current (ID, Tc) | 8 A | — |
| Pulsed Drain Current (IDM) | 22 A | — |
| On-Resistance (RDS(on), max) | 600 mΩ at VGS=10V | — |
| Maximum Power Dissipation (Ptot) | 60 W (Tc) | — |
| Gate Threshold Voltage (VGS(th)) | 3 V (typical) | — |
| Maximum Gate-Source Voltage (VGS) | ±30 V | — |
| Avalanche Energy, Single Pulse (EAS) | 20 mJ | — |
| Avalanche Energy, Repetitive (EAR) | 0.17 mJ | — |
| Gambaran Suhu Operasi | -55 C to +150 C | — |
| Kemasan | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK, 2 leads + tab) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | CoolMOS P7 super-junction | OptiMOS 3 (N-Channel, Enhancement Mode) |
| Polarity | N-Channel | — |
| Aras MSL | 1 (per JEDEC J-STD-020) | 1 |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPD068N10N3GATMA1 |
| Continuous Drain Current (ID) at Tc | — | 90 A |
| On-Resistance RDS(on) max | — | 6.8 mOhm |
| Power Dissipation (PD) at Tc | — | 150 W |
| Gate Threshold Voltage VGS(th) | — | 2.0 V to 4.0 V (typical) |
| Suhu Hubungan Operasi | — | -55 C to +175 C |
| Channel Type | — | N-Channel |
| Configuration | — | Single |
| Status RoHS | — | Compliant |
| Packing | — | Tape & Reel (T/R) |
| Qualification | — | Industrial (non-automotive) |