IPD80R600P7ATMA1 vs IPD068N10N3GATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD80R600P7ATMA1 sa pamamagitan ng Infineon at IPD068N10N3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD80R600P7ATMA1 IPD80R600P7ATMA1 - 800V 600mΩ CoolMOS P7 MOSFET | Infineon

IPD80R600P7ATMA1 - 800V 600mΩ CoolMOS P7 MOSFET | Infineon

IPD80R600P7ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD80R600P7ATMA1 IPD068N10N3GATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Drain-Source Voltage (VDS) 800 V 100 V
Continuous Drain Current (ID, Tc) 8 A —
Pulsed Drain Current (IDM) 22 A —
On-Resistance (RDS(on), max) 600 mΩ at VGS=10V —
Maximum Power Dissipation (Ptot) 60 W (Tc) —
Gate Threshold Voltage (VGS(th)) 3 V (typical) —
Maximum Gate-Source Voltage (VGS) ±30 V —
Avalanche Energy, Single Pulse (EAS) 20 mJ —
Avalanche Energy, Repetitive (EAR) 0.17 mJ —
Hanay ng Temperature na Operasyon -55 C to +150 C —
Packhaging PG-TO252-3 (DPAK) PG-TO252-3 (DPAK, 2 leads + tab)
Uri ng Pagpapasok Surface Mount Surface Mount
Technology CoolMOS P7 super-junction OptiMOS 3 (N-Channel, Enhancement Mode)
Polarity N-Channel —
Level ng MSL 1 (per JEDEC J-STD-020) 1
Manufacturer — Infineon Technologies
Part Number — IPD068N10N3GATMA1
Continuous Drain Current (ID) at Tc — 90 A
On-Resistance RDS(on) max — 6.8 mOhm
Power Dissipation (PD) at Tc — 150 W
Gate Threshold Voltage VGS(th) — 2.0 V to 4.0 V (typical)
Temperature ng Junction na Operasyon — -55 C to +175 C
Channel Type — N-Channel
Configuration — Single
Tindminan RoHS — Compliant
Packing — Tape & Reel (T/R)
Qualification — Industrial (non-automotive)

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