IPL60R105P7AUMA1 vs IPD60R360P7SAUMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPL60R105P7AUMA1 disebabkan oleh Infineon dan IPD60R360P7SAUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΩ N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | IPL60R105P7AUMA1 | IPD60R360P7SAUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | CoolMOS P7 |
| Technology | Superjunction (SJ) N-Channel Power MOSFET | Superjunction (SJ) N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| On-Resistance (RDS(on)) max | 105 mΩ | — |
| Continuous Drain Current (ID) at Tc | 33 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (Ptot) at Tc | 137 W | — |
| Gate Threshold Voltage (VGS(th)) typ | 3.5 V | — |
| Gate Charge (Qg) typ | 45 nC | — |
| Gambaran Suhu Operasi | -55C to +150C | -55C to +150C (junction) |
| Kemasan | PG-VSON-4 (4-pin SMD with exposed pad) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Channel Type | N-Channel | N-Channel |
| Aras MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant | Compliant |
| Boson Bebas | Yes | — |
| Lead-Free | Yes | — |
| Continuous Drain Current (ID) at TC | — | 9 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 360 mOhm (typ, VGS = 10 V) |
| Power Dissipation (PD) at TC | — | 41 W |
| Gate-Source Threshold Voltage (VGS(th)) | — | 3.0 V to 4.5 V (typ) |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Kemasan / Case | — | PG-TO252-3 (DPAK) |
| Bilangan Pin | — | 3 |