IPL60R105P7AUMA1 vs IPD60R360P7SAUMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPL60R105P7AUMA1 sa pamamagitan ng Infineon at IPD60R360P7SAUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD60R360P7SAUMA1 IPD60R360P7SAUMA1 - 600V 360mOhm CoolMOS P7 MOSFET | Infineon

IPD60R360P7SAUMA1 - 600V 360mOhm CoolMOS P7 MOSFET | Infineon

IPD60R360P7SAUMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPL60R105P7AUMA1 IPD60R360P7SAUMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS P7 CoolMOS P7
Technology Superjunction (SJ) N-Channel Power MOSFET Superjunction (SJ) N-Channel MOSFET
Drain-Source Voltage (VDS) 600 V 600 V
On-Resistance (RDS(on)) max 105 mΩ —
Continuous Drain Current (ID) at Tc 33 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (Ptot) at Tc 137 W —
Gate Threshold Voltage (VGS(th)) typ 3.5 V —
Gate Charge (Qg) typ 45 nC —
Hanay ng Temperature na Operasyon -55C to +150C -55C to +150C (junction)
Packhaging PG-VSON-4 (4-pin SMD with exposed pad) —
Uri ng Pagpapasok Surface Mount Surface Mount
Channel Type N-Channel N-Channel
Level ng MSL [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Tindminan RoHS Compliant Compliant
Wala sa Halogen Yes —
Lead-Free Yes —
Continuous Drain Current (ID) at TC — 9 A
Static Drain-Source On-Resistance (RDS(on)) — 360 mOhm (typ, VGS = 10 V)
Power Dissipation (PD) at TC — 41 W
Gate-Source Threshold Voltage (VGS(th)) — 3.0 V to 4.5 V (typ)
Gate Charge (Qg) — [DATA_NEEDED: Qg value]
Packhaging / Kaso — PG-TO252-3 (DPAK)
Bilang ng Pins — 3

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