IPP600N25N3GXKSA1 vs STW45NM50 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPP600N25N3GXKSA1 disebabkan oleh Infineon dan STW45NM50 disebabkan oleh STMicroelectronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPP600N25N3GXKSA1 STW45NM50
Merek Infineon STMicroelectronics
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) — $9.55
Manufacturer Infineon Technologies —
Series OptiMOS 3 —
Part Status Active —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) —
Drain-to-Source Voltage (VDS) 250 V —
Continuous Drain Current (ID) at Tc=25C 25 A —
Static Drain-to-Source On-Resistance (RDS(on)) max 60 mOhm at VGS=10V —
Power Dissipation (PD) at Tc=25C 136 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Kemasan / Case TO-220-3 (PG-TO220-3-1) —
Jenis Pemasangan Through Hole Through Hole
Gambaran Suhu Operasi -55C to +175C (junction) -55°C to +150°C
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical value] —
Reverse Recovery Time (trr) [DATA_NEEDED: trr typical value] —
Lead Free Status Lead Free / RoHS Compliant —
Kiraan Pin 3 (Gate, Drain, Source) —
Polarity — N-Channel
Drain-Source Voltage (VDS) — 500 V
Continuous Drain Current (ID) at 25°C — 45 A
Continuous Drain Current (ID) at 100°C — 30 A
Pulsed Drain Current (IDM) — 180 A
Gate-Source Voltage (VGS) — ±30 V
On-Resistance (RDS(on)) — 0.09 ohm
Gate Charge (Qg) — 120 nC
Avalanche Energy (EAS) — 1.2 J
Power Dissipation (PD) — 450 W
Kemasan — TO-247
Status RoHS — Compliant
Boson Bebas — Yes

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