IPP600N25N3GXKSA1 vs STW45NM50 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPP600N25N3GXKSA1 sa pamamagitan ng Infineon at STW45NM50 sa pamamagitan ng STMicroelectronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPP600N25N3GXKSA1 - 250V 25A 60mOhm N-Ch OptiMOS 3 | Infineon
IPP600N25N3GXKSA1 ✓ NakahandaSTMicroelectronics
STW45NM50 - 45A, 500V N-Channel Power MOSFET | STMicroelectronics
STW45NM50 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPP600N25N3GXKSA1 | STW45NM50 |
|---|---|---|
| Brand | Infineon | STMicroelectronics |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | — | $9.55 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 3 | — |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain-to-Source Voltage (VDS) | 250 V | — |
| Continuous Drain Current (ID) at Tc=25C | 25 A | — |
| Static Drain-to-Source On-Resistance (RDS(on)) max | 60 mOhm at VGS=10V | — |
| Power Dissipation (PD) at Tc=25C | 136 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Packhaging / Kaso | TO-220-3 (PG-TO220-3-1) | — |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Hanay ng Temperature na Operasyon | -55C to +175C (junction) | -55°C to +150°C |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | — |
| Reverse Recovery Time (trr) | [DATA_NEEDED: trr typical value] | — |
| Lead Free Status | Lead Free / RoHS Compliant | — |
| Bilang ng Pin | 3 (Gate, Drain, Source) | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 500 V |
| Continuous Drain Current (ID) at 25°C | — | 45 A |
| Continuous Drain Current (ID) at 100°C | — | 30 A |
| Pulsed Drain Current (IDM) | — | 180 A |
| Gate-Source Voltage (VGS) | — | ±30 V |
| On-Resistance (RDS(on)) | — | 0.09 ohm |
| Gate Charge (Qg) | — | 120 nC |
| Avalanche Energy (EAS) | — | 1.2 J |
| Power Dissipation (PD) | — | 450 W |
| Packhaging | — | TO-247 |
| Tindminan RoHS | — | Compliant |
| Wala sa Halogen | — | Yes |