IPP60R180P7XKSA1 vs IPW60R041C6FKSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPP60R180P7XKSA1 disebabkan oleh Infineon dan IPW60R041C6FKSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPP60R180P7XKSA1 | IPW60R041C6FKSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | NRND |
| Manufacturer | Infineon Technologies | — |
| Technology | CoolMOS P7 (Superjunction N-Channel) | CoolMOS™ C6 (Superjunction N-channel) |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at TC=25°C | 18 A | — |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed drain current at TC=25°C] | — |
| On-Resistance RDS(on) max at VGS=10V | 180 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | — |
| Gate Charge Qg typ | [DATA_NEEDED: total gate charge at VGS=10V] | — |
| Power Dissipation PD at TC=25°C | 72 W | — |
| Gambaran Suhu Operasi | -55 °C to +150 °C | -55°C to +150°C |
| Kemasan | PG-TO220-3 (through-hole) | PG-TO247-3-1 (TO-247-3) |
| Jenis Pemasangan | Through Hole | Through Hole |
| Bilangan Pin | 3 (Gate, Drain, Source) | — |
| Avalanche Energy Rated | Yes | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Aras MSL | N/A (through-hole) | Not Applicable (Through-hole) |
| Continuous Drain Current (ID, Tc=25°C) | — | 77.5 A |
| Power Dissipation (PD, Tc=25°C) | — | 481 W |
| On-State Resistance (RDS(on)) | — | 41 mΩ at VGS=10V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | 2.5 V to 3.5 V typical |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Rise Time (tr) | — | [DATA_NEEDED: tr value] |
| Fall Time (tf) | — | [DATA_NEEDED: tf value] |