IPP60R190P6XKSA1 vs STP20N60M2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPP60R190P6XKSA1 disebabkan oleh Infineon dan STP20N60M2 disebabkan oleh STMicroelectronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPP60R190P6XKSA1 STP20N60M2
Merek Infineon STMicroelectronics
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Obsolete
Manufacturer Infineon Technologies —
Product Family CoolMOS P6 —
Technology Superjunction (SJ) MOSFET —
Channel Type N-Channel —
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID) at Tc=25C 20.2 A —
On-Resistance RDS(on) max at 25C 190 mOhm —
Total Power Dissipation (Ptot) at Tc=25C 151 W —
Kemasan PG-TO220-3 (through-hole) TO-220
Jenis Pemasangan Through Hole Through Hole
Gate Drive Voltage (typical) 10 V —
Gambaran Suhu Operasi -55C to +150C (junction) -55°C to +150°C
Status RoHS Compliant Compliant
Lead-Free Yes —
Aras MSL Not applicable (through-hole) —
Product Variant XKSA1 (industrial grade, tube pack) —
Continuous Drain Current (ID) at 25°C — 20 A
Continuous Drain Current (ID) at 100°C — 12 A
Pulsed Drain Current (IDM) — 80 A
On-Resistance (RDS(on)) — 0.19 ohm typical, 0.23 ohm max
Gate-Source Voltage (VGS) — ±25 V
Gate Threshold Voltage (VGS(th)) — 2 V to 4 V
Total Gate Charge (Qg) — 45 nC
Input Capacitance (Ciss) — 1900 pF
Output Capacitance (Coss) — 120 pF
Reverse Transfer Capacitance (Crss) — 5 pF
Avalanche Energy (EAS) — 400 mJ
Thermal Resistance (Junction-to-Case) — 1.67 °C/W
Tegangan Panas, Hubungan ke Lingkungan — 62.5 °C/W

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