IPP60R190P6XKSA1 vs STP20N60M2 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IPP60R190P6XKSA1 tarafından Infineon ve STP20N60M2 tarafından STMicroelectronicsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
STMicroelectronics
STP20N60M2 - 600V 20A N-Channel Power MOSFET | STMicroelectronics
STP20N60M2 ObsoleteÖzellik Karşılaştırması
| Parametre | IPP60R190P6XKSA1 | STP20N60M2 |
|---|---|---|
| Marka | Infineon | STMicroelectronics |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Obsolete |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolMOS P6 | — |
| Technology | Superjunction (SJ) MOSFET | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at Tc=25C | 20.2 A | — |
| On-Resistance RDS(on) max at 25C | 190 mOhm | — |
| Total Power Dissipation (Ptot) at Tc=25C | 151 W | — |
| Paket | PG-TO220-3 (through-hole) | TO-220 |
| Montaj Türü | Through Hole | Through Hole |
| Gate Drive Voltage (typical) | 10 V | — |
| İşletim Sıcaklığı Aralığı | -55C to +150C (junction) | -55°C to +150°C |
| RoHS Durumu | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL Seviyesi | Not applicable (through-hole) | — |
| Product Variant | XKSA1 (industrial grade, tube pack) | — |
| Continuous Drain Current (ID) at 25°C | — | 20 A |
| Continuous Drain Current (ID) at 100°C | — | 12 A |
| Pulsed Drain Current (IDM) | — | 80 A |
| On-Resistance (RDS(on)) | — | 0.19 ohm typical, 0.23 ohm max |
| Gate-Source Voltage (VGS) | — | ±25 V |
| Gate Threshold Voltage (VGS(th)) | — | 2 V to 4 V |
| Total Gate Charge (Qg) | — | 45 nC |
| Input Capacitance (Ciss) | — | 1900 pF |
| Output Capacitance (Coss) | — | 120 pF |
| Reverse Transfer Capacitance (Crss) | — | 5 pF |
| Avalanche Energy (EAS) | — | 400 mJ |
| Thermal Resistance (Junction-to-Case) | — | 1.67 °C/W |
| Jantten Ortama Termal Direnç | — | 62.5 °C/W |