IPP60R190P6XKSA1 vs STP20N60M2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPP60R190P6XKSA1 sa pamamagitan ng Infineon at STP20N60M2 sa pamamagitan ng STMicroelectronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPP60R190P6XKSA1 - 600V CoolMOS P6 N-Channel MOSFET | Infineon
IPP60R190P6XKSA1 ✓ NakahandaSTMicroelectronics
STP20N60M2 - 600V 20A N-Channel Power MOSFET | STMicroelectronics
STP20N60M2 ObsoletePagsanggunian na paghahambing
| Parametro | IPP60R190P6XKSA1 | STP20N60M2 |
|---|---|---|
| Brand | Infineon | STMicroelectronics |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Obsolete |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolMOS P6 | — |
| Technology | Superjunction (SJ) MOSFET | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at Tc=25C | 20.2 A | — |
| On-Resistance RDS(on) max at 25C | 190 mOhm | — |
| Total Power Dissipation (Ptot) at Tc=25C | 151 W | — |
| Packhaging | PG-TO220-3 (through-hole) | TO-220 |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Gate Drive Voltage (typical) | 10 V | — |
| Hanay ng Temperature na Operasyon | -55C to +150C (junction) | -55°C to +150°C |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Level ng MSL | Not applicable (through-hole) | — |
| Product Variant | XKSA1 (industrial grade, tube pack) | — |
| Continuous Drain Current (ID) at 25°C | — | 20 A |
| Continuous Drain Current (ID) at 100°C | — | 12 A |
| Pulsed Drain Current (IDM) | — | 80 A |
| On-Resistance (RDS(on)) | — | 0.19 ohm typical, 0.23 ohm max |
| Gate-Source Voltage (VGS) | — | ±25 V |
| Gate Threshold Voltage (VGS(th)) | — | 2 V to 4 V |
| Total Gate Charge (Qg) | — | 45 nC |
| Input Capacitance (Ciss) | — | 1900 pF |
| Output Capacitance (Coss) | — | 120 pF |
| Reverse Transfer Capacitance (Crss) | — | 5 pF |
| Avalanche Energy (EAS) | — | 400 mJ |
| Thermal Resistance (Junction-to-Case) | — | 1.67 °C/W |
| Thermal Resistance, Junction-to-Ambient | — | 62.5 °C/W |