IPT015N10NF2SATMA1 vs IPT017N12NM6ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPT015N10NF2SATMA1 disebabkan oleh Infineon dan IPT017N12NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPT015N10NF2SATMA1 | IPT017N12NM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 120 V |
| Continuous Drain Current (ID, Tc) | 315 A | — |
| Continuous Drain Current (ID, Ta) | 35 A | — |
| On-Resistance (RDS(on)) at VGS=10V | 1.5 mΩ | — |
| Gate-Source Threshold (VGS(th)) | 3.8 V at 267 µA | — |
| Total Power Dissipation (Ta) | 3.8 W | — |
| Total Power Dissipation (Tc) | 300 W | — |
| Gambaran Suhu Operasi | -55 °C to +175 °C | — |
| Kemasan | PG-HSOF-8-10 (9-pin, 8+tab) | PG-HSOF-8 (TOLL) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | OptiMOS trench, N-channel enhancement | OptiMOS 6 |
| Gate Drive Voltage (typ) | 10 V | — |
| Tenaga Gesa tunggal padek | [DATA_NEEDED: EAS value] | — |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPT017N12NM6ATMA1 |
| Jenis Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 29 A |
| Continuous Drain Current (ID) at Tc | — | 331 A |
| On-Resistance RDS(on) max | — | 1.7 mOhm |
| Power Dissipation at Ta | — | 3 W |
| Power Dissipation at Tc | — | 395 W |
| Suhu Operasi | — | -55C to +175C |
| Kiraan Pin | — | 8 + tab |
| Packaging | — | Tape & Reel |