IPW60R180P7XKSA1 vs IPB60R280P7ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPW60R180P7XKSA1 disebabkan oleh Infineon dan IPB60R280P7ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPW60R180P7XKSA1 IPB60R280P7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) — $0.88
Technology CoolMOS P7 (Superjunction, 7th generation) Superjunction (SJ)
Polarity N-Channel —
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc=25C) 18 A —
On-Resistance RDS(on) max 180 mOhm —
Gate Charge (Qg, typ) [DATA_NEEDED: Qg value] —
Power Dissipation (Pd, Tc=25C) 72 W —
Gate Threshold Voltage (VGS(th), typ) 3.5 V —
Gate Drive Voltage (VGS, recommended) 10 V (typical), +/-20 V max —
Suhu Hubungan Operasi -55C to +150C —
Kemasan PG-TO247-3 (TO-247-3, through-hole, 3+tab pins) PG-TO263-3 (D2PAK)
Jenis Pemasangan Through Hole Surface Mount
Body Diode Fast body diode with low reverse recovery (Qrr) —
Integrated Gate Resistor Yes —
Status RoHS Compliant Compliant
Orderable Part Number IPW60R180P7XKSA1 (tube pack, industrial grade) —
Manufacturer — Infineon Technologies
Product Family — CoolMOS P7 (600 V)
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (V_DSS) — 600 V
Continuous Drain Current (I_D, T_C=25°C) — 12 A
On-Resistance R_DS(on) max (V_GS=10V) — 280 mOhm
Gate-Source Threshold V_GS(th) typ — 3.5 V
Power Dissipation P_D (T_C=25°C) — 53 W
Kiraan Pin — 3 (2 + Tab)
Gambaran Suhu Operasi — -55 °C to +150 °C (T_j max)
Configuration — Single N-Channel
Lead-Free — Yes
Generation — 7th Gen CoolMOS (successor to P6)

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