IRF1010ZPBF vs IRF3205ZSTRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF1010ZPBF disebabkan oleh Infineon dan IRF3205ZSTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF1010ZPBF IRF3205ZSTRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
Drain-Source Voltage (Vdss) 55 V —
Continuous Drain Current (Id) at Tc 75 A (Tc=25C) —
Power Dissipation (Pd) at Tc 140 W (Tc=25C) —
On-Resistance (Rds on) Max [DATA_NEEDED: Rds(on) max at 10V] (typ approx. 7.5 mOhm per Mouser listing) —
Total Gate Charge (Qg) 63 nC (typ, per Mouser listing) 76 nC
MOSFET Operating Mode Enhancement —
Kemasan TO-220AB (3-pin + tab), Through Hole D2PAK (TO-263)
Configuration Single MOSFET —
Maximum Junction Temperature 175 C —
Jenis Pemasangan Through Hole Surface Mount
Qualification JEDEC industry standard qualification —
Avalanche Rating Improved repetitive avalanche rated —
Status RoHS Compliant (PBF = Pb-free) Compliant
Lead Status Lead Free —
Gate Threshold Voltage (Vgs th) [DATA_NEEDED: gate threshold voltage range] —
FET Type — N-Channel
Technology — HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at Tc=25C — 110 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-Resistance RDS(on) max @ VGS=10V — 6.5 mOhm
Gate-Source Voltage (VGS) max — +/- 20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Power Dissipation (PD) at Tc=25C — 170 W
Suhu Hubungan Operasi — -55C to +175C
Packaging — Tape & Reel (left reel)
Aras MSL — 1
Body Diode — Avalanche-rated intrinsic

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