IRF9530NPBF vs IRF9530NSTRLPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF9530NPBF disebabkan oleh Infineon dan IRF9530NSTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF9530NPBF | IRF9530NSTRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -100 V | -100 V |
| Continuous Drain Current (ID) at TC=25°C | -14 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=-10V | 200 mΩ | 200 mOhm |
| Gate-Source Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) typ | 38.7 nC | — |
| Maximum Power Dissition at TC=25°C | 79 W | — |
| Suhu Hubungan Operasi | -55°C to +175°C | — |
| Kemasan | TO-220AB (through-hole) | D2PAK (TO-263-3) |
| Jenis Pemasangan | Through Hole | Surface Mount |
| Mounting Screw Torque (max) | [DATA_NEEDED: maximum torque] | — |
| Avalanche Rating | Repetitive avalanche rated | — |
| dv/dt Rating | Dynamic dV/dt rated | — |
| Lead-Free / RoHS Status | Lead-Free (PBF suffix), RoHS compliant | — |
| Continuous Drain Current (ID) at TC=25C | — | -14 A |
| Total Gate Charge (Qg) | — | 38.7 nC (typ) |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) range] |
| Power Dissition (PD) at TC=25C | — | 79 W |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| Thermal Resistance Theta_JC | — | 1.5 C/W (typ) |
| Gambaran Suhu Operasi | — | -55C to +150C (TJ) |
| Lead-Free / RoHS | — | Yes (Pb-free suffix) |
| Technology | — | HEXFET (Planar DMOS) |
| Avalanche Rated | — | [DATA_NEEDED: EAS rating] |