IRF9530NPBF vs IRF9530NSTRLPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRF9530NPBF sa pamamagitan ng Infineon at IRF9530NSTRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IRF9530NPBF - -100V P-Channel HEXFET MOSFET, 14A, TO-220AB | Infineon
IRF9530NPBF ✓ NakahandaInfineon
IRF9530NSTRLPBF -100V P-Ch HEXFET MOSFET, 14A, D2PAK | Infineon
IRF9530NSTRLPBF ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IRF9530NPBF | IRF9530NSTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -100 V | -100 V |
| Continuous Drain Current (ID) at TC=25°C | -14 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=-10V | 200 mΩ | 200 mOhm |
| Gate-Source Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) typ | 38.7 nC | — |
| Maximum Power Dissition at TC=25°C | 79 W | — |
| Temperature ng Junction na Operasyon | -55°C to +175°C | — |
| Packhaging | TO-220AB (through-hole) | D2PAK (TO-263-3) |
| Uri ng Pagpapasok | Through Hole | Surface Mount |
| Mounting Screw Torque (max) | [DATA_NEEDED: maximum torque] | — |
| Avalanche Rating | Repetitive avalanche rated | — |
| dv/dt Rating | Dynamic dV/dt rated | — |
| Lead-Free / RoHS Status | Lead-Free (PBF suffix), RoHS compliant | — |
| Continuous Drain Current (ID) at TC=25C | — | -14 A |
| Total Gate Charge (Qg) | — | 38.7 nC (typ) |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) range] |
| Power Dissition (PD) at TC=25C | — | 79 W |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| Thermal Resistance Theta_JC | — | 1.5 C/W (typ) |
| Hanay ng Temperature na Operasyon | — | -55C to +150C (TJ) |
| Lead-Free / RoHS | — | Yes (Pb-free suffix) |
| Technology | — | HEXFET (Planar DMOS) |
| Avalanche Rated | — | [DATA_NEEDED: EAS rating] |