IRF9540NPBF vs IRF9540NSTRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF9540NPBF disebabkan oleh Infineon dan IRF9540NSTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF9540NPBF IRF9540NSTRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon (formerly International Rectifier)
Part Number IRF9540NPBF —
Jenis Transistor P-Channel MOSFET (HEXFET Power MOSFET) —
Drain-to-Source Voltage (VDS) -100 V —
Continuous Drain Current (ID) at Tc -23 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-to-Source Voltage (VGS) max +/-20 V —
Static Drain-Source On-Resistance (RDS(on)) at VGS=-10V 117 mOhm —
Total Gate Charge (Qg) 64.7 nC 64.7 nC
Power Dissipation (PD) at Tc=25C 140 W —
Gambaran Suhu Hubungan Operasi -55 C to +175 C —
Kemasan / Case TO-220AB (through-hole, 3 pins + tab) —
Jenis Pemasangan Through Hole Surface Mount
Process Technology Planar HEXFET cell structure —
Qualification JEDEC standard —
Status RoHS Compliant —
Lead-Free Yes (Pb-free matte tin plating) —
Product Type — Single P-Channel Power MOSFET (HEXFET)
Drain-Source Voltage (Vdss) — -100 V
Continuous Drain Current (Id) — -23 A (at Tc)
On-Resistance (Rds(on)) — 117 mOhm max
Power Dissipation (Ta) — 3.1 W
Power Dissipation (Tc) — 110 W
Kemasan — D2PAK (TO-263), surface mount
Technology — HEXFET, Advanced Process
Polarity — P-Channel
Operating Mode — Enhancement-mode
Avalanche Rated — Yes
Lead Finish — Pb-free, RoHS-compliant
Shipping Media — Tape and Reel (TR suffix)

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