IRFH5015TRPBF vs IRFH6200TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFH5015TRPBF disebabkan oleh Infineon dan IRFH6200TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFH5015TRPBF | IRFH6200TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | IR MOSFET (HEXFET) | StrongIRFET (trench N-channel) |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at TA=25C | 10 A | — |
| Continuous Drain Current (ID) at TC=25C | 56 A | — |
| On-Resistance (RDS(on)) max | 31 mOhm | — |
| Total Gate Charge (Qg) | 33 nC | 155 nC |
| Power Dissipation (TA=25C) | 3.6 W | — |
| Power Dissipation (TC=25C) | 156 W | — |
| Gate Drive Voltage (VGS recommended) | 10 V | — |
| Kemasan | 8-PQFN (5x6) SuperSO8 | 8-PQFN 5x6 mm (Power QFN) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Configuration | Single with built-in body diode | — |
| Suhu Operasi | -55C to +150C (TJ max) | — |
| Status RoHS | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IRFH6200TRPBF |
| Drain-to-Source Voltage (VDS) | — | 20 V |
| Continuous Drain Current (ID) at Ta=25C | — | 49 A |
| Continuous Drain Current (ID) at Tc=25C | — | 100 A |
| On-State Resistance RDS(on) max at VGS=10V | — | 1.2 mOhm |
| Gate-to-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS absolute max rating] |
| Power Dissipation at Ta (25C) | — | 3.6 W |
| Power Dissipation at Tc (25C) | — | 156 W |
| Suhu Hubungan Operasi | — | -55C to +150C |
| Lead-Free / RoHS | — | Yes (TRPBF suffix = Pb-free T&R) |
| Aras MSL | — | [DATA_NEEDED: MSL rating per JEDEC J-STD-020] |
| Channel Type | — | N-Channel enhancement mode |
| Avalanche Energy Rated | — | Yes |