IRFR220NPBF vs IRFR220NTRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR220NPBF disebabkan oleh Infineon dan IRFR220NTRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFR220NPBF IRFR220NTRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel MOSFET, Metal Oxide N-Channel MOSFET
Drain-to-Source Voltage (VDS) 200 V 200 V
Continuous Drain Current (ID) at TC=25C 5 A —
Power Dissipation (PD) at TC=25C 43 W —
Static Drain-Source On-Resistance (RDS(on)) max 0.6 ohm at VGS = 10 V —
Jenis Pemasangan Surface Mount Surface Mount
Kemasan / Case TO-252AA (DPAK) —
Technology HEXFET (Planar) HEXFET (IR MOSFET)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] 15 nC (typical per Mouser listing)
Gambaran Suhu Operasi -55C to +150C (junction) —
Lead-Free / RoHS Yes, lead-free (PBF suffix) —
Avalanche Energy Rated Yes (per datasheet characterization) Yes (fully characterized)
Kiraan Pin 3 (Gate, Drain, Source) plus tab —
Aras MSL 1 (per JEDEC J-STD-020) 1 (unlimited floor life per JEDEC J-STD-020)
Continuous Drain Current (ID) at TC=25°C — 5 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
On-Resistance Rds(on) max at VGS=10V — 600 milliohm
Maximum Power Dissition (PD) at TC=25°C — 43 W
Suhu Hubungan Operasi — -55°C to +150°C
Kemasan — TO-252AA (DPAK), surface mount
Status RoHS — Compliant (PBF suffix)
Lead-Free — Yes (PBF suffix indicates Pb-free plating)

Laporan Datasheet & Sumber

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