IRFR220NPBF vs IRFR220NTRPBF 比較
詳細並排比較 IRFR220NPBF 由 Infineon 與 IRFR220NTRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFR220NPBF | IRFR220NTRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 200 V | 200 V |
| Continuous Drain Current (ID) at TC=25C | 5 A | — |
| Power Dissipation (PD) at TC=25C | 43 W | — |
| Static Drain-Source On-Resistance (RDS(on)) max | 0.6 ohm at VGS = 10 V | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 封裝 / 外殼 | TO-252AA (DPAK) | — |
| Technology | HEXFET (Planar) | HEXFET (IR MOSFET) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | 15 nC (typical per Mouser listing) |
| 工作溫度範圍 | -55C to +150C (junction) | — |
| Lead-Free / RoHS | Yes, lead-free (PBF suffix) | — |
| Avalanche Energy Rated | Yes (per datasheet characterization) | Yes (fully characterized) |
| 腳位數 | 3 (Gate, Drain, Source) plus tab | — |
| MSL 等級 | 1 (per JEDEC J-STD-020) | 1 (unlimited floor life per JEDEC J-STD-020) |
| Continuous Drain Current (ID) at TC=25°C | — | 5 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| On-Resistance Rds(on) max at VGS=10V | — | 600 milliohm |
| Maximum Power Dissition (PD) at TC=25°C | — | 43 W |
| 工作接面溫度 | — | -55°C to +150°C |
| 封裝 | — | TO-252AA (DPAK), surface mount |
| RoHS 狀態 | — | Compliant (PBF suffix) |
| Lead-Free | — | Yes (PBF suffix indicates Pb-free plating) |