IRFR220NPBF vs IRFZ24NPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR220NPBF disebabkan oleh Infineon dan IRFZ24NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFR220NPBF IRFZ24NPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel MOSFET, Metal Oxide N-Channel
Drain-to-Source Voltage (VDS) 200 V 55 V
Continuous Drain Current (ID) at TC=25C 5 A 17 A
Power Dissipation (PD) at TC=25C 43 W 45 W
Static Drain-Source On-Resistance (RDS(on)) max 0.6 ohm at VGS = 10 V —
Jenis Pemasangan Surface Mount Through Hole
Kemasan / Case TO-252AA (DPAK) —
Technology HEXFET (Planar) HEXFET planar cell
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] 13.3 nC
Gambaran Suhu Operasi -55C to +150C (junction) —
Lead-Free / RoHS Yes, lead-free (PBF suffix) —
Avalanche Energy Rated Yes (per datasheet characterization) —
Kiraan Pin 3 (Gate, Drain, Source) plus tab —
Aras MSL 1 (per JEDEC J-STD-020) —
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) — ± 20 V
RDS(on) at VGS=10V — 70 mOhm (max)
Suhu Hubungan Operasi — -55C to +175C
Kemasan — TO-220AB (through hole)
Switching Frequency Range — Optimized for < 100 kHz
Status RoHS — Compliant
Lead-Free — Yes (PBF suffix)
Qualification — JEDEC standard
Channel Mode — Enhancement

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