IRFR220NPBF vs IRFZ24NPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFR220NPBF sa pamamagitan ng Infineon at IRFZ24NPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRFR220NPBF | IRFZ24NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel |
| Drain-to-Source Voltage (VDS) | 200 V | 55 V |
| Continuous Drain Current (ID) at TC=25C | 5 A | 17 A |
| Power Dissipation (PD) at TC=25C | 43 W | 45 W |
| Static Drain-Source On-Resistance (RDS(on)) max | 0.6 ohm at VGS = 10 V | — |
| Uri ng Pagpapasok | Surface Mount | Through Hole |
| Packhaging / Kaso | TO-252AA (DPAK) | — |
| Technology | HEXFET (Planar) | HEXFET planar cell |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | 13.3 nC |
| Hanay ng Temperature na Operasyon | -55C to +150C (junction) | — |
| Lead-Free / RoHS | Yes, lead-free (PBF suffix) | — |
| Avalanche Energy Rated | Yes (per datasheet characterization) | — |
| Bilang ng Pin | 3 (Gate, Drain, Source) plus tab | — |
| Level ng MSL | 1 (per JEDEC J-STD-020) | — |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) | — | ± 20 V |
| RDS(on) at VGS=10V | — | 70 mOhm (max) |
| Temperature ng Junction na Operasyon | — | -55C to +175C |
| Packhaging | — | TO-220AB (through hole) |
| Switching Frequency Range | — | Optimized for < 100 kHz |
| Tindminan RoHS | — | Compliant |
| Lead-Free | — | Yes (PBF suffix) |
| Qualification | — | JEDEC standard |
| Channel Mode | — | Enhancement |