IRFR2405TRLPBF vs IRFR3806TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR2405TRLPBF disebabkan oleh Infineon dan IRFR3806TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFR2405TRLPBF | IRFR3806TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET, 7th generation) | HEXFET (IR MOSFET) |
| Drain-Source Voltage (VDS) | 55 V | 60 V |
| Continuous Drain Current (ID) at Tc | 56 A | 43 A |
| Pulsed Drain Current (IDM) | 200 A (typical, per datasheet family) | — |
| On-Resistance RDS(on) max @ VGS=10V | 16 mOhm | — |
| Gate Charge (Qg) typical | 70 nC | — |
| Power Dissipation (PD) at Tc | 110 W | — |
| Gate-Source Voltage (VGS) max | ±20 V | +/- 20 V |
| Gambaran Suhu Operasi | -55 C to +175 C (junction) | -55 C to +175 C |
| Kemasan | TO-252AA (DPAK), 3-pin (2 + Tab) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Avalanche Energy Rated | Yes (HEXFET ruggedized design) | — |
| Lead-Free / RoHS | Yes, PBF suffix indicates lead-free and RoHS compliant | Yes (PBF suffix, lead-free) |
| Packaging | Tape & Reel (TR) | — |
| Transistor Polarity | — | N-Channel |
| MOSFET Operating Mode | — | Enhancement |
| On-State Resistance RDS(on) max | — | 15.8 mOhm at VGS = 10 V |
| Total Gate Charge (Qg) | — | 22 nC |
| Power Dissipation (Pd) at Tc = 25 C | — | 71 W |
| Kemasan / Case | — | TO-252AA (DPAK) |
| Number of Units in IC | — | 1 |
| Avalanche Rated | — | Yes (HEXFET family) |