IRFZ34NPBF vs IRF150P220AKMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFZ34NPBF disebabkan oleh Infineon dan IRF150P220AKMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFZ34NPBF IRF150P220AKMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Status Active —
FET Type N-Channel, Enhancement Mode —
Technology HEXFET (Planar DMOS, 5th generation) StrongIRFET
Drain-Source Voltage (V_DSS) 55 V —
Continuous Drain Current (I_D) at Tc=25C 29 A —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (P_D) at Tc=25C 68 W —
On-Resistance R_DS(on) max at V_GS=10V 40 mOhm —
Gate Charge (Q_g) typ 22.7 nC —
Gate Threshold Voltage V_GS(th) typ [DATA_NEEDED: gate threshold voltage] —
Input Capacitance (C_iss) typ [DATA_NEEDED: input capacitance] —
Gambaran Suhu Operasi -55 C to +175 C -55C to +175C
Maximum Junction Temperature 175 C —
Kemasan TO-220AB (3-pin + tab, through-hole) TO-247-3 (PG-TO247-3)
Jenis Pemasangan Through Hole Through Hole
Lead-Free Status Yes (Pb-free, RoHS compliant) —
Qualification JEDEC standard —
Status RoHS Compliant Compliant
Configuration Single N-Channel, 3-pin (3+tab) —
Part Number — IRF150P220AKMA1
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS max) — 150 V
Continuous Drain Current (ID) at Tc=25C — 203 A
On-Resistance (RDS(on) max) at VGS=10V — 2.7 mOhm
Gate-Source Voltage (VGS max) — [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typ]
Power Dissipation (Pd) at Tc=25C — 556 W
Power Dissipation (Pd) at Ta=25C — 3.8 W
Terminal Finish — Tin (Sn)
JESD-609 Code — e3
Lead-Free — Yes

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