IRFZ34NPBF vs IRF150P220AKMA1 比較

詳細並排比較 IRFZ34NPBF 由 Infineon 與 IRF150P220AKMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRFZ34NPBF IRF150P220AKMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Status Active —
FET Type N-Channel, Enhancement Mode —
Technology HEXFET (Planar DMOS, 5th generation) StrongIRFET
Drain-Source Voltage (V_DSS) 55 V —
Continuous Drain Current (I_D) at Tc=25C 29 A —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (P_D) at Tc=25C 68 W —
On-Resistance R_DS(on) max at V_GS=10V 40 mOhm —
Gate Charge (Q_g) typ 22.7 nC —
Gate Threshold Voltage V_GS(th) typ [DATA_NEEDED: gate threshold voltage] —
Input Capacitance (C_iss) typ [DATA_NEEDED: input capacitance] —
工作溫度範圍 -55 C to +175 C -55C to +175C
Maximum Junction Temperature 175 C —
封裝 TO-220AB (3-pin + tab, through-hole) TO-247-3 (PG-TO247-3)
安裝類型 Through Hole Through Hole
Lead-Free Status Yes (Pb-free, RoHS compliant) —
Qualification JEDEC standard —
RoHS 狀態 Compliant Compliant
Configuration Single N-Channel, 3-pin (3+tab) —
Part Number — IRF150P220AKMA1
電晶體類型 — N-Channel MOSFET
Drain-Source Voltage (VDS max) — 150 V
Continuous Drain Current (ID) at Tc=25C — 203 A
On-Resistance (RDS(on) max) at VGS=10V — 2.7 mOhm
Gate-Source Voltage (VGS max) — [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typ]
Power Dissipation (Pd) at Tc=25C — 556 W
Power Dissipation (Pd) at Ta=25C — 3.8 W
Terminal Finish — Tin (Sn)
JESD-609 Code — e3
Lead-Free — Yes

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