IRFZ34NPBF vs IRF150P220AKMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRFZ34NPBF tarafından Infineon ve IRF150P220AKMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRFZ34NPBF | IRF150P220AKMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Status | Active | — |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | HEXFET (Planar DMOS, 5th generation) | StrongIRFET |
| Drain-Source Voltage (V_DSS) | 55 V | — |
| Continuous Drain Current (I_D) at Tc=25C | 29 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (P_D) at Tc=25C | 68 W | — |
| On-Resistance R_DS(on) max at V_GS=10V | 40 mOhm | — |
| Gate Charge (Q_g) typ | 22.7 nC | — |
| Gate Threshold Voltage V_GS(th) typ | [DATA_NEEDED: gate threshold voltage] | — |
| Input Capacitance (C_iss) typ | [DATA_NEEDED: input capacitance] | — |
| İşletim Sıcaklığı Aralığı | -55 C to +175 C | -55C to +175C |
| Maximum Junction Temperature | 175 C | — |
| Paket | TO-220AB (3-pin + tab, through-hole) | TO-247-3 (PG-TO247-3) |
| Montaj Türü | Through Hole | Through Hole |
| Lead-Free Status | Yes (Pb-free, RoHS compliant) | — |
| Qualification | JEDEC standard | — |
| RoHS Durumu | Compliant | Compliant |
| Configuration | Single N-Channel, 3-pin (3+tab) | — |
| Part Number | — | IRF150P220AKMA1 |
| Transistor Türü | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS max) | — | 150 V |
| Continuous Drain Current (ID) at Tc=25C | — | 203 A |
| On-Resistance (RDS(on) max) at VGS=10V | — | 2.7 mOhm |
| Gate-Source Voltage (VGS max) | — | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typ] |
| Power Dissipation (Pd) at Tc=25C | — | 556 W |
| Power Dissipation (Pd) at Ta=25C | — | 3.8 W |
| Terminal Finish | — | Tin (Sn) |
| JESD-609 Code | — | e3 |
| Lead-Free | — | Yes |