K3LK4K40CM-BGCP vs K3LK8K80CM-MFCP Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci K3LK4K40CM-BGCP disebabkan oleh Samsung Electronics dan K3LK8K80CM-MFCP disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Samsung Electronics
K3LK4K40CM-BGCP K3LK4K40CM-BGCP - LPDDR5 96Gb 6400Mbps DRAM | Samsung

K3LK4K40CM-BGCP - LPDDR5 96Gb 6400Mbps DRAM | Samsung

K3LK4K40CM-BGCP ✓ Aktif
Samsung Electronics
K3LK8K80CM-MFCP K3LK8K80CM-MFCP - 48Gbit LPDDR5 6400Mbps DRAM | Samsung

K3LK8K80CM-MFCP - 48Gbit LPDDR5 6400Mbps DRAM | Samsung

K3LK8K80CM-MFCP ✓ Aktif

Pengandingan Spesifikasi

Parametr K3LK4K40CM-BGCP K3LK8K80CM-MFCP
Merek Samsung Electronics Samsung Electronics
Kategori DRAM Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan LPDDR5 SDRAM LPDDR5 SDRAM
Density 96 Gb (12 GB) 48 Gbit (6 GB)
Organisasi 1536M x 64 [DATA_NEEDED: organization (x width)]
Kadar Data 6400 Mbps per pin —
Supply Voltage (VDD) 1.05 V —
Kemasan 496-ball FBGA 315-ball FBGA (MFCP)
Jenis Pemasangan Surface Mount Surface Mount
Antaramuka LPDDR5 (JEDEC) LPDDR5 (JESD209-5 class low-power DRAM interface)
Suhu Operasi [DATA_NEEDED: Operating Temperature] -40 C to +105 C (automotive-grade)
Access Time / CAS Latency [DATA_NEEDED: CAS Latency] —
Refresh Scheme Per-bank / all-bank refresh —
Power-Down Modes Deep sleep / power-down supported —
Application Segment Mobile, embedded, computing modules —
Status RoHS [DATA_NEEDED: RoHS Status] unknown
Packaging [DATA_NEEDED: standard packing quantity] —
Pin Speed — 6400 Mbps
Data Rate (package) — 51.2 GB/s (family max)
Ball Count — 315
Tegangan Pemberi Arus — [DATA_NEEDED: VDD/VDDQ voltage]
Power Saving vs LPDDR4X — Approximately 20%
Generation — LPDDR5 (5th generation low-power DRAM)
Application Grade — Automotive-grade storage chip
Place of Origin — Johor, Malaysia

Laporan Datasheet & Sumber

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