K4A4G085WD-BCRC vs K4A4G085WF-BITD Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A4G085WD-BCRC disebabkan oleh Samsung Electronics dan K4A4G085WF-BITD disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A4G085WD-BCRC | K4A4G085WF-BITD |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Memory Density | 4 Gbit | — |
| Organisasi | 512M x 8 | 512M x 8 |
| Jenis Ingatan | DDR4 SDRAM (D-die) | DDR4 SDRAM |
| Kadar Data | 2400 Mb/s (PC2400) | — |
| Tegangan Pemberi Arus | 1.2 V | — |
| Kemasan | FBGA-78 (TFBGA) | 78-ball FBGA (78FBGA) |
| Number of Terminals | 78 | — |
| Antaramuka | Parallel | Parallel, DDR4 SSTL12 |
| Access Mode | Multi-bank page burst | — |
| Jenis Pemasangan | Surface Mount | Surface Mount (BGA) |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | CL19 (typical at 2666 Mbps) |
| Gambaran Suhu Operasi | [DATA_NEEDED: Operating Temperature Range] | — |
| Refresh | [DATA_NEEDED: Refresh specification] | Self-refresh and auto-refresh (8K/64ms per JEDEC DDR4) |
| Status RoHS | [DATA_NEEDED: RoHS Status] | — |
| Aras MSL | [DATA_NEEDED: MSL Level] | — |
| Density | — | 4 Gbit |
| Speed | — | 2666 Mbps (MT/s) |
| Supply Voltage (VDD) | — | 1.2 V |
| VPP Voltage | — | 2.5 V |
| Suhu Operasi | — | -40C to +95C |
| Bank Architecture | — | 8 banks x 4 bank groups |
| Burst Length | — | BL8 |
| Termination | — | ODT / dynamic ODT |
| Data Mask | — | DM supported (x8) |
| Application Grade | — | Industrial |