K4A4G085WD-BCRC vs K4A4G085WF-BITD Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A4G085WD-BCRC sa pamamagitan ng Samsung Electronics at K4A4G085WF-BITD sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A4G085WD-BCRC - 4Gb DDR4-2400 SDRAM 512Mx8 | Samsung
K4A4G085WD-BCRC ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A4G085WD-BCRC | K4A4G085WF-BITD |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | DRAM |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Memory Density | 4 Gbit | — |
| Organisasyon | 512M x 8 | 512M x 8 |
| Uri ng Memory | DDR4 SDRAM (D-die) | DDR4 SDRAM |
| Rate ng Data | 2400 Mb/s (PC2400) | — |
| Volte ng Pagbibigay | 1.2 V | — |
| Packhaging | FBGA-78 (TFBGA) | 78-ball FBGA (78FBGA) |
| Number of Terminals | 78 | — |
| Interface | Parallel | Parallel, DDR4 SSTL12 |
| Access Mode | Multi-bank page burst | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (BGA) |
| Latensya ng CAS | [DATA_NEEDED: CAS Latency] | CL19 (typical at 2666 Mbps) |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: Operating Temperature Range] | — |
| Refresh | [DATA_NEEDED: Refresh specification] | Self-refresh and auto-refresh (8K/64ms per JEDEC DDR4) |
| Tindminan RoHS | [DATA_NEEDED: RoHS Status] | — |
| Level ng MSL | [DATA_NEEDED: MSL Level] | — |
| Density | — | 4 Gbit |
| Speed | — | 2666 Mbps (MT/s) |
| Supply Voltage (VDD) | — | 1.2 V |
| VPP Voltage | — | 2.5 V |
| Temperature na Operasyon | — | -40C to +95C |
| Bank Architecture | — | 8 banks x 4 bank groups |
| Burst Length | — | BL8 |
| Termination | — | ODT / dynamic ODT |
| Data Mask | — | DM supported (x8) |
| Application Grade | — | Industrial |