K4A4G085WD-BCTD vs K4A4G085WD-BCRC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A4G085WD-BCTD disebabkan oleh Samsung Electronics dan K4A4G085WD-BCRC disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A4G085WD-BCTD - 4Gb DDR4 SDRAM 512Mx8 2666Mbps | Samsung
K4A4G085WD-BCTD ✓ AktifPengandingan Spesifikasi
| Parametr | K4A4G085WD-BCTD | K4A4G085WD-BCRC |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM (D-die) |
| Die Generation | D-die | — |
| Density | 4 Gb | — |
| Organisasi | 512M x 8 | 512M x 8 |
| Kadar Data | 2666 Mbps/pin | 2400 Mb/s (PC2400) |
| Tegangan Pemberi Arus | 1.2 V | 1.2 V |
| Suhu Operasi | 0C to +85C | — |
| Kemasan | 78-ball FBGA | FBGA-78 (TFBGA) |
| Ball Pitch | 0.8 mm | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Antaramuka | DDR4 (JEDEC-compatible) | Parallel |
| Speed Class | DDR4-2666 (PC4-21300) | — |
| Bank Architecture | DDR4 bank-group architecture | — |
| On-Die Termination (ODT) | Yes | — |
| DLL | Yes | — |
| Status RoHS | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: RoHS Status] |
| Aras MSL | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: MSL Level] |
| Memory Density | — | 4 Gbit |
| Number of Terminals | — | 78 |
| Access Mode | — | Multi-bank page burst |
| Latensi CAS | — | [DATA_NEEDED: CAS Latency] |
| Gambaran Suhu Operasi | — | [DATA_NEEDED: Operating Temperature Range] |
| Refresh | — | [DATA_NEEDED: Refresh specification] |