K4A4G085WD-BCTD vs K4A4G085WD-BCRC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A4G085WD-BCTD sa pamamagitan ng Samsung Electronics at K4A4G085WD-BCRC sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A4G085WD-BCTD - 4Gb DDR4 SDRAM 512Mx8 2666Mbps | Samsung
K4A4G085WD-BCTD ✓ NakahandaSamsung Electronics
K4A4G085WD-BCRC - 4Gb DDR4-2400 SDRAM 512Mx8 | Samsung
K4A4G085WD-BCRC ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A4G085WD-BCTD | K4A4G085WD-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM (D-die) |
| Die Generation | D-die | — |
| Density | 4 Gb | — |
| Organisasyon | 512M x 8 | 512M x 8 |
| Rate ng Data | 2666 Mbps/pin | 2400 Mb/s (PC2400) |
| Volte ng Pagbibigay | 1.2 V | 1.2 V |
| Temperature na Operasyon | 0C to +85C | — |
| Packhaging | 78-ball FBGA | FBGA-78 (TFBGA) |
| Ball Pitch | 0.8 mm | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Interface | DDR4 (JEDEC-compatible) | Parallel |
| Speed Class | DDR4-2666 (PC4-21300) | — |
| Bank Architecture | DDR4 bank-group architecture | — |
| On-Die Termination (ODT) | Yes | — |
| DLL | Yes | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: RoHS Status] |
| Level ng MSL | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: MSL Level] |
| Memory Density | — | 4 Gbit |
| Number of Terminals | — | 78 |
| Access Mode | — | Multi-bank page burst |
| Latensya ng CAS | — | [DATA_NEEDED: CAS Latency] |
| Hanay ng Temperature na Operasyon | — | [DATA_NEEDED: Operating Temperature Range] |
| Refresh | — | [DATA_NEEDED: Refresh specification] |