K4A8G085WB-BCTD vs K4A8G085WB-BIWE Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G085WB-BCTD disebabkan oleh Samsung Electronics dan K4A8G085WB-BIWE disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A8G085WB-BCTD - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung
K4A8G085WB-BCTD ✓ Aktif
Pengandingan Spesifikasi
| Parametr | K4A8G085WB-BCTD | K4A8G085WB-BIWE |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $8.53 | — |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organisasi | 1G x 8 | — |
| Kadar Data | 2666 Mbps | 3200 Mbps |
| Tegangan Pemberi Arus | 1.2 V | 1.2 V |
| Die Revision | B-die | — |
| Kemasan | FBGA-78 (78-ball TFBGA) | 78-FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Bank Structure | 16 banks, 4 bank groups | — |
| Burst Length | BL8 | — |
| Termination | On-Die Termination (ODT), dynamic ODT | — |
| Ciri-ciri | ZQ calibration, CRC, CA parity, asynchronous reset | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | 0°C to +85°C |
| Speed Bin | -BCTD (CL-tRCD-tRP bin) | — |
| Terminations | 78 | — |
| JEDEC-30 Package Code | R-PBGA-B78 | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Saiz Ingatan | — | 8 Gb |
| Memory Organization | — | 1G x 8 |
| Memory Interface | — | Parallel |
| Access Time | — | [DATA_NEEDED: tRCD, tRP, tRAS] |
| Latensi CAS | — | [DATA_NEEDED: CL value] |
| Refresh | — | Auto-refresh, self-refresh |
| Lead-Free | — | Yes |
| Boson Bebas | — | Yes |